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 Ordering number : ENN7708
MCH6731
MCH6731
Features
* *
PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode
DC / DC Converter Applications
Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitatiing high-density mounting. Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm).
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 0.5 2 --55 to +125 --55 to +125 V V A A C C VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) -15 -12 --5 --1 --2 0.85 150 --55 to +125 V V V A A W C C Symbol Conditions Ratings Unit
Marking : PF
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
63004 TS IM TB-00000071 No.7708-1/5
MCH6731
Electrical Characteristics at Ta=25C
Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time [Di] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF IR C trr IR=0.5mA IF=0.5A VR=6V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 12 0.40 13 10 0.45 90 V V A pF ns ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCB=--12V, IE=0 VEB=--4V, IC=0 VCE=--2V, IC=--10mA VCE=--2V, IC=--50mA VCB=--10V, f=1MHz IC=--400mA, IB=--20mA IC=--400mA, IB=--20mA IC=--10A, IE=0 IC=--1mA, RBE= IE=--10A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --15 --12 -5 30 75 15 300 450 6 --120 --0.9 --180 --1.2 --0.1 --0.1 700 MHz pF mV V V V V ns ns ns A A Symbol Conditions Ratings min typ max Unit
Package Dimensions unit : mm 2191A
0.25
0.3 4 5 6
0.15
2.1
1.6
0.25
32 0.65 2.0
0.07
1
6
5
4
(Bottom view)
0.85
1 : Base 2 : Emitter 3 : Anode 4 : Common(Collector/Cathode) 5 : Common(Collector/Cathode) 6 : Common(Collector/Cathode) SANYO : MCPH6
1
2
3
(Top view)
Electrical Connection
6 5 4
1 : Base 2 : Emitter 3 : Anode 4 : Common(Collector/Cathode) 5 : Common(Collector/Cathode) 6 : Common(Collector/Cathode)
Top view
1
2
3
No.7708-2/5
MCH6731
Switching Time Test Circuit
[TR]
PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 RB + 220F VBE=5V + 470F VCC= --5V
trr Specified Circuit
[Di]
Duty10%
100mA 100mA 10mA
RL
50 10s
100
10
--5V trr
IC=20IB1= --20IB2= --400mA
--1000
IC -- VCE
A --30 m --20 m
5 --1
[TR]
--1200
IC -- VBE
[TR]
--900
mA A m --10
VCE= --2V
A
--7mA
--1000
Collector Current, IC -- mA
--5mA
--3mA --2mA
--700 --600 --500 --400 --300 --200 --100 0 0
Collector Current, IC -- mA
--800
--800
--0.5mA
--200
IB=0
--100 --200 --300 --400 --500 --600 --700 --800 --900 --1000
0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT05095
Collector-to-Emitter Voltage, VCE -- mV
1000
IT05094
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
--1000 7 5 3 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3
[TR]
VCE(sat) -- IC
Ta= 7
--25
--1mA
C
--400
5C 25 C
--600
[TR]
VCE= --2V
Ta=75C
IC / IB=20
7
DC Current Gain, hFE
5
25C
--25C
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
3
C 25
Ta=
C 75 5C --2
2
100 --1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
--1000 7
5 7--1000 IT05096
VCE(sat) -- IC
Collector Current, IC -- mA
--10 7
5 7--1000 IT05097
[TR]
VBE(sat) -- IC
[TR]
IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V
IC / IB=20
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
5 3 2
5 3 2
--100 7 5 3 2
--1.0 7 5 3 2
25C
Ta= --25C
75C
25
C
5C =7 Ta 5C --2
--10 --1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
5 7--1000 IT05098
--0.1 --1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
5 7--1000 IT05099
No.7708-3/5
MCH6731
3 2
Cob -- VCB
[TR] f=1MHz
Gain-Bandwidth Product, fT -- MHz
1000 7 5 3 2
fT -- IC
[TR] VCE= --2V
Output Capacitance, Cob -- pF
10 7 5
100 7 5 3 2
3 2
1.0 --1.0
2
3
5
7
--10
2
3
10 --1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector-to-Base Voltage, VCB -- V
10 7 5
IT05100
Ron -- IB
IN
Collector Current, IC -- mA
3
5 7--1000 IT05101
[TR] OUT
Collector Current, IC -- A
2 --1.0
ASO
ICP= --2A IC= --1A
1m
s s 0 00 10 5 ms 10
[TR] 10s
s
f=1MHz
1k 1k IB
ON-Resistance, Ron --
3 2
7 5 3 2 --0.1 7 5 3
10 0 DC ms op er ati
on
1.0 7 5 3 2
2
0.1 --0.1
2
3
5
7
--1.0
2
3
5
Base Current, IB -- mA
1.0 0.9 0.85 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120
--10 IT06091
7
--0.01 --0.1
Ta=25C Single pulse Mounted on a ceramic board (600mm2!0.8mm)
2 3 5 7 --1.0 2 3 5 7 --10 2 3
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
IT06884
[TR]
Collector Dissipation, PC -- W
M
ou
nt
ed
on
ac
er
am
ic
bo
ar
d
(6
00
m
m2 ! 0.
8m
m
)
160
140
Ambient Temperature, Ta -- C
1.0 7 5
IT06885
IF -- VF
[SBD]
10000 7 5 3 2
IR -- VR
Ta=125C
[SBD]
100C
75C
Reverse Current, IR -- A
Forward Current, IF -- A
3 2
1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0 5
0.1 7 5 3 2
50C
25C
0.01 0 0.1 0.2 0.3 0.4 0.5 IT06886
Ta= 125 C 100 C 75 C 50C 25C
10
15 IT06887
Forward Voltage, VF -- V
Reverse Voltage, VR -- V
No.7708-4/5
MCH6731
Average Forward Power Dissipation, PF(AV) -- W
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 180 360 360
PF(AV) -- IO
Rectangular wave (1) (2) (4) (3)
[SBD]
7 5
C -- VR
[SBD] f=1MHz
Interterminal Capacitance, C -- pF
1.4 IT06888
Sine wave
3
2
(1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180
0.6 0.8 1.0 1.2
10 7 5 1.0
2
3
5
7
10
2
3
Average Forward Current, IO -- A
Reverse Voltage, VR -- V
IT06889
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2004. Specifications and information herein are subject to change without notice.
PS No.7708-5/5


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